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SPP06N60C3HKSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO220-3-1
- Description: MOSFET N-CH 650V 6.2A TO220-3
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SPP06N60C3HKSA1 Specifications:
- MfrPart.: SPP06N60C3HKSA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 650V 6.2A TO220-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: CoolMOS™
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 650 V
- Current-ContinuousDrain(Id)@25°C: 6.2A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 750mOhm @ 3.9A, 10V
- Vgs(th)(Max)@Id: 3.9V @ 260µA
- GateCharge(Qg)(Max)@Vgs: 31 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 620 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 74W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: PG-TO220-3-1
- SPP06N60C3HKSA1 Infineon, MOSFET N-CH 650V 6.2A TO220-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SPP06N60C3HKSA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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