
The high-performance microcontroller product leverages Infineon’s proprietary eNVM (embedded non-volatile memories) technology and will be manufactured at UMC’s Singapore
GaN technology is paving the way for more energy-efficient and CO 2-saving solutions that support decarbonization.
Infineon’s nvSRAM technology combines high-performance SRAM with best-in-class SONOS non-volatile technology.
The planned acquisition of Cypress is a landmark step in Infineon’s strategic development. Infineon will strengthen and accelerate our profitable growth and put our busin
With its improved pin positioning, the module also ensures short and clean commutation loops with reduced stray module inductances.
The devices come in half-bridge configuration with an on-state resistance (R DS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package.
The EZ-PD™ PMG1 (Power Delivery Microcontroller Gen1) is Infineon’s first generation of USB PD MCUs targeting any embedded system that provides or consumes power with hig
The CoolSiC hybrid product family combines key benefits of the 650 V TRENCHSTOP™ 5 IGBT technology and the unipolar structure of co-packed Schottky barrier CoolSiC diodes
Infineon set the stage for long-term, profitable growth based on energy efficiency and CO 2 reduction at an early stage and announced the construction of the chip factory
Furthermore, its scalable family concept allows for a common software architecture enabling significant platform software savings.
Changes are on the horizon in this industry, as diesel locomotives and railcars will be incrementally replaced by environmentally-friendly, electric solutions.
Once fully equipped, the new module will generate €2 billion in additional annual revenue with products based on silicon carbide and gallium nitride.
Diagnosing sleep apnea is challenging and often includes observing a patient in a sleep laboratory, a stressful situation which can lead to deviating results.
The application gets the power it needs contactlessly from the mobile phone. This is also referred to as energy harvesting.
Infineon is acquiring 100% of the company's shares. Both parties have agreed not to disclose the amount of the transaction.
- IC MCU 16BIT 832KB FLASH 144LQFP
- IC SRAM 1MBIT PARALLEL 44SOJ
- MOSFET N-CH 55V 50A TO252-31
- RECTIFIER DIODE, SCHOTTKY, 0.12A
- MOSFET N-CH 100V 7.2A/40A TDSON
- IC FLASH 128MBIT PARALLEL 64FBGA
- SIC DIODES
- MOSFET N-CH 40V 195A TO262
- EVAL KIT IM69D130 20-FLEX 4-ADAP
- MOSFET N-CH 20V 6.5A MICRO8
- IC SRAM 36MBIT PARALLEL 165FBGA
- MOSFET N-CH 75V 130A TO220AB
- BIPOLAR GEN PURPOSE TRANSISTOR
- BIPOLAR TRANSISTOR TRANSISTOR
- IC SRAM 36MBIT PARALLEL 165FBGA
- IC FLASH 64MBIT SPI/QUAD 8WSON
- MOSFET N-CH 75V 42A DPAK
- MEMORY CIRCUIT, FLASH+PSRAM, 2MX
- IC MCU 16BIT 256KB FLASH 100QFP
- IGBT 600V 47A TO247AC
- IC MICROCONTROLLER
- 16-BIT FLASH RISC MCU
- TRANS PNP 32V 0.1A SOT-23
- IC MCU 16BIT ROMLESS 128TQFP
- IC SRAM 4MBIT PARALLEL 32TSOP II
- IC MCU 32B 2.0625MB FLSH 144LQFP
- DUAL-PORT SRAM, 64KX18, 6.5NS
- TRANS PREBIAS PNP 250MW TSFP-3
- OTP ROM, 64KX8, 200NS PQCC32
