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IRLB3813PBF Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: TO-220AB
- Description: IRLB3813 - 12V-300V N-CHANNEL PO
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IRLB3813PBF Specifications:
- MfrPart.: IRLB3813PBF
- Mfr: Infineon Technologies
- Description: IRLB3813 - 12V-300V N-CHANNEL PO
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Bulk
- Series: HEXFET®
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 260A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 1.95mOhm @ 60A, 10V
- Vgs(th)(Max)@Id: 2.35V @ 150µA
- GateCharge(Qg)(Max)@Vgs: 86 nC @ 4.5 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 8.42 pF @ 15 V
- FETFeature: -
- PowerDissipation(Max): 230W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: TO-220AB
- IRLB3813PBF Infineon, IRLB3813 - 12V-300V N-CHANNEL PO, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IRLB3813PBF, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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