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IRG8CH106K10F Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: Die
- Description: IGBT 1200V 110A DIE
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IRG8CH106K10F Specifications:
- MfrPart.: IRG8CH106K10F
- Mfr: Infineon Technologies
- Description: IGBT 1200V 110A DIE
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Bulk
- Series: -
- PartStatus: Obsolete
- IGBTType: -
- Voltage-CollectorEmitterBreakdown(Max): 1200 V
- Current-Collector(Ic)(Max): -
- Current-CollectorPulsed(Icm): -
- Vce(on)(Max)@VgeIc: 2V @ 15V, 110A
- Power-Max: -
- SwitchingEnergy: -
- InputType: Standard
- GateCharge: 700 nC
- Td(on/off)@25°C: 80ns/380ns
- TestCondition: 600V, 110A, 1Ohm, 15V
- ReverseRecoveryTime(trr): -
- OperatingTemperature: -40°C ~ 175°C (TJ)
- MountingType: Surface Mount
- Package/Case: Die
- IRG8CH106K10F Infineon, IGBT 1200V 110A DIE, Discrete Semiconductor Products~Transistors - IGBTs - Single
IRG8CH106K10F, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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