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- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: 8-SO
- Description: MOSFET N-CH 30V 17.2A 8SO
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IRF8113PBF Specifications:
- MfrPart.: IRF8113PBF
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 30V 17.2A 8SO
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: HEXFET®
- PartStatus: Discontinued at
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 17.2A (Ta)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 5.6mOhm @ 17.2A, 10V
- Vgs(th)(Max)@Id: 2.2V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 36 nC @ 4.5 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 2910 pF @ 15 V
- FETFeature: -
- PowerDissipation(Max): 2.5W (Ta)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: 8-SO
- IRF8113PBF Infineon, MOSFET N-CH 30V 17.2A 8SO, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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