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IRF1018ESLPBF Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: TO-262
- Description: MOSFET N-CH 60V 79A TO262
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IRF1018ESLPBF Specifications:
- MfrPart.: IRF1018ESLPBF
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 60V 79A TO262
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: HEXFET®
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 60 V
- Current-ContinuousDrain(Id)@25°C: 79A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 8.4mOhm @ 47A, 10V
- Vgs(th)(Max)@Id: 4V @ 100µA
- GateCharge(Qg)(Max)@Vgs: 69 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 2290 pF @ 50 V
- FETFeature: -
- PowerDissipation(Max): 110W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: TO-262
- IRF1018ESLPBF Infineon, MOSFET N-CH 60V 79A TO262, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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