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IQE006NE2LM5ATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TSON-8-4
- Description: MOSFET N-CH 25V 41A/298A 8TSON
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IQE006NE2LM5ATMA1 Specifications:
- MfrPart.: IQE006NE2LM5ATMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 25V 41A/298A 8TSON
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™5
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 25 V
- Current-ContinuousDrain(Id)@25°C: 41A (Ta), 298A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 650mOhm @ 20A, 10V
- Vgs(th)(Max)@Id: 2V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 82.1 nC @ 10 V
- Vgs(Max): ±16V
- InputCapacitance(Ciss)(Max)@Vds: 5453 pF @ 12 V
- FETFeature: -
- PowerDissipation(Max): 2.1W (Ta), 89W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount, Wettable Flank
- SupplierDevicePackage: PG-TSON-8-4
- IQE006NE2LM5ATMA1 Infineon, MOSFET N-CH 25V 41A/298A 8TSON, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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