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IPTG111N20NM3FDATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-HSOG-8-1
- Description: TRENCH >=100V PG-HSOG-8
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IPTG111N20NM3FDATMA1 Specifications:
- MfrPart.: IPTG111N20NM3FDATMA1
- Mfr: Infineon Technologies
- Description: TRENCH >=100V PG-HSOG-8
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™ 3
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 200 V
- Current-ContinuousDrain(Id)@25°C: 10.8A (Ta), 108A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 11.1mOhm @ 96A, 10V
- Vgs(th)(Max)@Id: 4V @ 267µA
- GateCharge(Qg)(Max)@Vgs: 81 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 7000 pF @ 100 V
- FETFeature: -
- PowerDissipation(Max): 3.8W (Ta), 375W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-HSOG-8-1
- IPTG111N20NM3FDATMA1 Infineon, TRENCH >=100V PG-HSOG-8, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPTG111N20NM3FDATMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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