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IPS65R1K4C6 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO251-3
- Description: MOSFET N-CH 650V 3.2A TO251-3
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IPS65R1K4C6 Specifications:
- MfrPart.: IPS65R1K4C6
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 650V 3.2A TO251-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Bulk
- Series: CoolMOS™ C6
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 650 V
- Current-ContinuousDrain(Id)@25°C: 3.2A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): -
- RdsOn(Max)@IdVgs: 1.4Ohm @ 1A, 10V
- Vgs(th)(Max)@Id: 3.5V @ 100µA
- GateCharge(Qg)(Max)@Vgs: 10.5 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 225 pF @ 100 V
- FETFeature: -
- PowerDissipation(Max): 28W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: PG-TO251-3
- IPS65R1K4C6 Infineon, MOSFET N-CH 650V 3.2A TO251-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPS65R1K4C6, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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