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IPS60R1K0PFD7SAKMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO251-3
- Description: MOSFET N-CH 650V 4.7A TO251-3
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IPS60R1K0PFD7SAKMA1 Specifications:
- MfrPart.: IPS60R1K0PFD7SAKMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 650V 4.7A TO251-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: CoolMOS™PFD7
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 650 V
- Current-ContinuousDrain(Id)@25°C: 4.7A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 1Ohm @ 1A, 10V
- Vgs(th)(Max)@Id: 4.5V @ 50µA
- GateCharge(Qg)(Max)@Vgs: 6 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 230 pF @ 400 V
- FETFeature: -
- PowerDissipation(Max): 26W (Tc)
- OperatingTemperature: -40°C ~ 150°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: PG-TO251-3
- IPS60R1K0PFD7SAKMA1 Infineon, MOSFET N-CH 650V 4.7A TO251-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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