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IPP041N12N3GXKSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO220-3
- Description: MOSFET N-CH 120V 120A TO220-3
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IPP041N12N3GXKSA1 Specifications:
- MfrPart.: IPP041N12N3GXKSA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 120V 120A TO220-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: OptiMOS™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 120 V
- Current-ContinuousDrain(Id)@25°C: 120A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 4.1mOhm @ 100A, 10V
- Vgs(th)(Max)@Id: 4V @ 270µA
- GateCharge(Qg)(Max)@Vgs: 211 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 13800 pF @ 60 V
- FETFeature: -
- PowerDissipation(Max): 300W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: PG-TO220-3
- IPP041N12N3GXKSA1 Infineon, MOSFET N-CH 120V 120A TO220-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPP041N12N3GXKSA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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