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IPN60R3K4CEATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-SOT223-3
- Description: MOSFET N-CH 600V 2.6A SOT223
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IPN60R3K4CEATMA1 Specifications:
- MfrPart.: IPN60R3K4CEATMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 600V 2.6A SOT223
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: CoolMOS™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 600 V
- Current-ContinuousDrain(Id)@25°C: 2.6A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 3.4Ohm @ 500mA, 10V
- Vgs(th)(Max)@Id: 3.5V @ 40µA
- GateCharge(Qg)(Max)@Vgs: 4.6 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 93 pF @ 100 V
- FETFeature: Super Junction
- PowerDissipation(Max): 5W (Tc)
- OperatingTemperature: -40°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-SOT223-3
- IPN60R3K4CEATMA1 Infineon, MOSFET N-CH 600V 2.6A SOT223, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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