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IPI80P04P4L04AKSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO262-3-1
- Description: MOSFET P-CH 40V 80A TO262-3
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IPI80P04P4L04AKSA1 Specifications:
- MfrPart.: IPI80P04P4L04AKSA1
- Mfr: Infineon Technologies
- Description: MOSFET P-CH 40V 80A TO262-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: Automotive, AEC-Q101, OptiMOS™
- PartStatus: Obsolete
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 40 V
- Current-ContinuousDrain(Id)@25°C: 80A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 4.7mOhm @ 80A, 10V
- Vgs(th)(Max)@Id: 2.2V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 176 nC @ 10 V
- Vgs(Max): +5V, -16V
- InputCapacitance(Ciss)(Max)@Vds: 3800 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 125W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: PG-TO262-3-1
- IPI80P04P4L04AKSA1 Infineon, MOSFET P-CH 40V 80A TO262-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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