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IPI111N15N3GAKSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO262-3
- Description: MOSFET N-CH 150V 83A TO262-3
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IPI111N15N3GAKSA1 Specifications:
- MfrPart.: IPI111N15N3GAKSA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 150V 83A TO262-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: OptiMOS™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 150 V
- Current-ContinuousDrain(Id)@25°C: 83A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 8V, 10V
- RdsOn(Max)@IdVgs: 11.1mOhm @ 83A, 10V
- Vgs(th)(Max)@Id: 4V @ 160µA
- GateCharge(Qg)(Max)@Vgs: 55 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 3230 pF @ 75 V
- FETFeature: -
- PowerDissipation(Max): 214W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: PG-TO262-3
- IPI111N15N3GAKSA1 Infineon, MOSFET N-CH 150V 83A TO262-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPI111N15N3GAKSA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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