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IPI08CN10N G Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO262-3
- Description: MOSFET N-CH 100V 95A TO262-3
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IPI08CN10N G Specifications:
- MfrPart.: IPI08CN10N G
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 100V 95A TO262-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: OptiMOS™
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 100 V
- Current-ContinuousDrain(Id)@25°C: 95A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 8.5mOhm @ 95A, 10V
- Vgs(th)(Max)@Id: 4V @ 130µA
- GateCharge(Qg)(Max)@Vgs: 100 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 6660 pF @ 50 V
- FETFeature: -
- PowerDissipation(Max): 167W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: PG-TO262-3
- IPI08CN10N G Infineon, MOSFET N-CH 100V 95A TO262-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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