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IPI020N06NAKSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO262-3-1
- Description: OPTLMOS N-CHANNEL POWER MOSFET
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IPI020N06NAKSA1 Specifications:
- MfrPart.: IPI020N06NAKSA1
- Mfr: Infineon Technologies
- Description: OPTLMOS N-CHANNEL POWER MOSFET
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Bulk
- Series: OptiMOS™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 60 V
- Current-ContinuousDrain(Id)@25°C: 29A (Ta), 120A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10V
- RdsOn(Max)@IdVgs: 2mOhm @ 100A, 10V
- Vgs(th)(Max)@Id: 2.8V @ 143µA
- GateCharge(Qg)(Max)@Vgs: 106 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 7.8 pF @ 30 V
- FETFeature: -
- PowerDissipation(Max): 3W (Ta), 214W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: PG-TO262-3-1
- IPI020N06NAKSA1 Infineon, OPTLMOS N-CHANNEL POWER MOSFET, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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