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IPG20N06S2L65ATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays Package/Case: 8-PowerVDFN
- Description: MOSFET 2N-CH 55V 20A TDSON-8-4
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IPG20N06S2L65ATMA1 Specifications:
- MfrPart.: IPG20N06S2L65ATMA1
- Mfr: Infineon Technologies
- Description: MOSFET 2N-CH 55V 20A TDSON-8-4
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
- Package: Tape & Reel (TR),Cut Tape (CT),Bulk
- Series: Automotive, AEC-Q101, OptiMOS™
- PartStatus: Active
- FETType: 2 N-Channel (Dual)
- FETFeature: Logic Level Gate
- DraintoSourceVoltage(Vdss): 55V
- Current-ContinuousDrain(Id)@25°C: 20A
- RdsOn(Max)@IdVgs: 65mOhm @ 15A, 10V
- Vgs(th)(Max)@Id: 2V @ 14µA
- GateCharge(Qg)(Max)@Vgs: 12nC @ 10V
- InputCapacitance(Ciss)(Max)@Vds: 410pF @ 25V
- Power-Max: 43W
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- Package/Case: 8-PowerVDFN
- IPG20N06S2L65ATMA1 Infineon, MOSFET 2N-CH 55V 20A TDSON-8-4, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
IPG20N06S2L65ATMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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