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IPDD60R190G7XTMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-HDSOP-10-1
- Description: MOSFET N-CH 600V 13A HDSOP-10
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IPDD60R190G7XTMA1 Specifications:
- MfrPart.: IPDD60R190G7XTMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 600V 13A HDSOP-10
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: CoolMOS™ G7
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 600 V
- Current-ContinuousDrain(Id)@25°C: 13A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 190mOhm @ 4.2A, 10V
- Vgs(th)(Max)@Id: 4V @ 210µA
- GateCharge(Qg)(Max)@Vgs: 18 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 718 pF @ 400 V
- FETFeature: -
- PowerDissipation(Max): 76W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-HDSOP-10-1
- IPDD60R190G7XTMA1 Infineon, MOSFET N-CH 600V 13A HDSOP-10, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPDD60R190G7XTMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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