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IPD65R650CEATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO252-3
- Description: MOSFET N-CH 650V 10.1A TO252-3
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IPD65R650CEATMA1 Specifications:
- MfrPart.: IPD65R650CEATMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 650V 10.1A TO252-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR)
- Series: CoolMOS™
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 650 V
- Current-ContinuousDrain(Id)@25°C: 10.1A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 650mOhm @ 2.1A, 10V
- Vgs(th)(Max)@Id: 3.5V @ 0.21mA
- GateCharge(Qg)(Max)@Vgs: 23 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 440 pF @ 100 V
- FETFeature: Super Junction
- PowerDissipation(Max): 86W (Tc)
- OperatingTemperature: -40°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TO252-3
- IPD65R650CEATMA1 Infineon, MOSFET N-CH 650V 10.1A TO252-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPD65R650CEATMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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