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IPD60R600E6ATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO252-3
- Description: MOSFET N-CH 600V 7.3A TO252
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IPD60R600E6ATMA1 Specifications:
- MfrPart.: IPD60R600E6ATMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 600V 7.3A TO252
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Bulk
- Series: CoolMOS™ E6
- PartStatus: Not For New Designs
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 600 V
- Current-ContinuousDrain(Id)@25°C: 7.3A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 600mOhm @ 2.4A, 10V
- Vgs(th)(Max)@Id: 3.5V @ 200µA
- GateCharge(Qg)(Max)@Vgs: 20.5 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 440 pF @ 100 V
- FETFeature: -
- PowerDissipation(Max): 63W (Tc)
- OperatingTemperature: -
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TO252-3
- IPD60R600E6ATMA1 Infineon, MOSFET N-CH 600V 7.3A TO252, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPD60R600E6ATMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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