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IPD49CN10N G Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO252-3
- Description: MOSFET N-CH 100V 20A TO252-3
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IPD49CN10N G Specifications:
- MfrPart.: IPD49CN10N G
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 100V 20A TO252-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR)
- Series: OptiMOS™
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 100 V
- Current-ContinuousDrain(Id)@25°C: 20A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 49mOhm @ 20A, 10V
- Vgs(th)(Max)@Id: 4V @ 20µA
- GateCharge(Qg)(Max)@Vgs: 16 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 1090 pF @ 50 V
- FETFeature: -
- PowerDissipation(Max): 44W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TO252-3
- IPD49CN10N G Infineon, MOSFET N-CH 100V 20A TO252-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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