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IPD088N06N3GBTMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO252-3
- Description: MOSFET N-CH 60V 50A TO252-3
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IPD088N06N3GBTMA1 Specifications:
- MfrPart.: IPD088N06N3GBTMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 60V 50A TO252-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™
- PartStatus: Last Time Buy
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 60 V
- Current-ContinuousDrain(Id)@25°C: 50A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 8.8mOhm @ 50A, 10V
- Vgs(th)(Max)@Id: 4V @ 34µA
- GateCharge(Qg)(Max)@Vgs: 48 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 3900 pF @ 30 V
- FETFeature: -
- PowerDissipation(Max): 71W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TO252-3
- IPD088N06N3GBTMA1 Infineon, MOSFET N-CH 60V 50A TO252-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPD088N06N3GBTMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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