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IPB019N08N3GATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO263-7
- Description: MOSFET N-CH 80V 180A TO263-7
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IPB019N08N3GATMA1 Specifications:
- MfrPart.: IPB019N08N3GATMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 80V 180A TO263-7
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 80 V
- Current-ContinuousDrain(Id)@25°C: 180A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10V
- RdsOn(Max)@IdVgs: 1.9mOhm @ 100A, 10V
- Vgs(th)(Max)@Id: 3.5V @ 270µA
- GateCharge(Qg)(Max)@Vgs: 206 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 14200 pF @ 40 V
- FETFeature: -
- PowerDissipation(Max): 300W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TO263-7
- IPB019N08N3GATMA1 Infineon, MOSFET N-CH 80V 180A TO263-7, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB019N08N3GATMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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