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IPB009N03LGATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO263-7-3
- Description: MOSFET N-CH 30V 180A TO263-7
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IPB009N03LGATMA1 Specifications:
- MfrPart.: IPB009N03LGATMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 30V 180A TO263-7
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™
- PartStatus: Not For New Designs
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 180A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 0.95mOhm @ 100A, 10V
- Vgs(th)(Max)@Id: 2.2V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 227 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 25000 pF @ 15 V
- FETFeature: -
- PowerDissipation(Max): 250W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TO263-7-3
- IPB009N03LGATMA1 Infineon, MOSFET N-CH 30V 180A TO263-7, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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