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IMZ120R090M1HXKSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO247-4-1
- Description: SICFET N-CH 1.2KV 26A TO247-4
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IMZ120R090M1HXKSA1 Specifications:
- MfrPart.: IMZ120R090M1HXKSA1
- Mfr: Infineon Technologies
- Description: SICFET N-CH 1.2KV 26A TO247-4
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: CoolSiC™
- PartStatus: Active
- FETType: N-Channel
- Technology: SiCFET (Silicon Carbide)
- DraintoSourceVoltage(Vdss): 1.2 kV
- Current-ContinuousDrain(Id)@25°C: 26A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 15V, 18V
- RdsOn(Max)@IdVgs: 117mOhm @ 8.5A, 18V
- Vgs(th)(Max)@Id: 5.7V @ 3.7mA
- GateCharge(Qg)(Max)@Vgs: 21 nC @ 18 V
- Vgs(Max): +23V, -7V
- InputCapacitance(Ciss)(Max)@Vds: 707 pF @ 800 V
- FETFeature: -
- PowerDissipation(Max): 115W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: PG-TO247-4-1
- IMZ120R090M1HXKSA1 Infineon, SICFET N-CH 1.2KV 26A TO247-4, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IMZ120R090M1HXKSA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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