- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO263-7
- Description: SICFET N-CH 1700V 7.4A TO263-7
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IMBF170R650M1XTMA1 Specifications:
- MfrPart.: IMBF170R650M1XTMA1
- Mfr: Infineon Technologies
- Description: SICFET N-CH 1700V 7.4A TO263-7
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: CoolSiC™
- PartStatus: Active
- FETType: N-Channel
- Technology: SiCFET (Silicon Carbide)
- DraintoSourceVoltage(Vdss): 1700 V
- Current-ContinuousDrain(Id)@25°C: 7.4A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 12V, 15V
- RdsOn(Max)@IdVgs: 650mOhm @ 1.5A, 15V
- Vgs(th)(Max)@Id: 5.7V @ 1.7mA
- GateCharge(Qg)(Max)@Vgs: 8 nC @ 12 V
- Vgs(Max): +20V, -10V
- InputCapacitance(Ciss)(Max)@Vds: 422 pF @ 1000 V
- FETFeature: -
- PowerDissipation(Max): 88W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: -
- SupplierDevicePackage: PG-TO263-7
- IMBF170R650M1XTMA1 Infineon, SICFET N-CH 1700V 7.4A TO263-7, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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