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IGT60R070D1E8220ATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-HSOF-8-3
- Description: GAN HV
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IGT60R070D1E8220ATMA1 Specifications:
- MfrPart.: IGT60R070D1E8220ATMA1
- Mfr: Infineon Technologies
- Description: GAN HV
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Bulk
- Series: CoolGaN™
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: GaNFET (Gallium Nitride)
- DraintoSourceVoltage(Vdss): 600 V
- Current-ContinuousDrain(Id)@25°C: 31A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): -
- RdsOn(Max)@IdVgs: -
- Vgs(th)(Max)@Id: 1.6V @ 2.6mA
- GateCharge(Qg)(Max)@Vgs: -
- Vgs(Max): -10V
- InputCapacitance(Ciss)(Max)@Vds: 380 pF @ 400 V
- FETFeature: -
- PowerDissipation(Max): 125W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-HSOF-8-3
- IGT60R070D1E8220ATMA1 Infineon, GAN HV, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IGT60R070D1E8220ATMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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