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IGB03N120H2ATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Description: IGBT 1200V 9.6A 62.5W TO263-3
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IGB03N120H2ATMA1 Specifications:
- MfrPart.: IGB03N120H2ATMA1
- Mfr: Infineon Technologies
- Description: IGBT 1200V 9.6A 62.5W TO263-3
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tape & Reel (TR)
- Series: -
- PartStatus: Last Time Buy
- IGBTType: -
- Voltage-CollectorEmitterBreakdown(Max): 1200 V
- Current-Collector(Ic)(Max): 9.6 A
- Current-CollectorPulsed(Icm): 9.9 A
- Vce(on)(Max)@VgeIc: 2.8V @ 15V, 3A
- Power-Max: 62.5 W
- SwitchingEnergy: 290µJ
- InputType: Standard
- GateCharge: 22 nC
- Td(on/off)@25°C: 9.2ns/281ns
- TestCondition: 800V, 3A, 82Ohm, 15V
- ReverseRecoveryTime(trr): -
- OperatingTemperature: -40°C ~ 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- IGB03N120H2ATMA1 Infineon, IGBT 1200V 9.6A 62.5W TO263-3, Discrete Semiconductor Products~Transistors - IGBTs - Single
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