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IFS100B12N3E4B31BOSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules Package/Case: Module
- Description: IGBT MOD 1200V 200A 515W
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IFS100B12N3E4B31BOSA1 Specifications:
- MfrPart.: IFS100B12N3E4B31BOSA1
- Mfr: Infineon Technologies
- Description: IGBT MOD 1200V 200A 515W
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
- Package: Tray
- Series: -
- PartStatus: Active
- IGBTType: Trench Field Stop
- Configuration: Full Bridge
- Voltage-CollectorEmitterBreakdown(Max): 1200 V
- Current-Collector(Ic)(Max): 200 A
- Power-Max: 515 W
- Vce(on)(Max)@VgeIc: 2.1V @ 15V, 100A
- Current-CollectorCutoff(Max): 1 mA
- InputCapacitance(Cies)@Vce: 6.3 nF @ 25 V
- Input: Standard
- NTCThermistor: Yes
- OperatingTemperature: -40°C ~ 150°C
- MountingType: Chassis Mount
- Package/Case: Module
- IFS100B12N3E4B31BOSA1 Infineon, IGBT MOD 1200V 200A 515W, Discrete Semiconductor Products~Transistors - IGBTs - Modules
IFS100B12N3E4B31BOSA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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