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FZ1800R12HE4B9HOSA2 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules Package/Case: Module
- Description: IGBT MODULE 1200V 2735A
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FZ1800R12HE4B9HOSA2 Specifications:
- MfrPart.: FZ1800R12HE4B9HOSA2
- Mfr: Infineon Technologies
- Description: IGBT MODULE 1200V 2735A
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
- Package: Tray
- Series: -
- PartStatus: Active
- IGBTType: Trench Field Stop
- Configuration: Single Switch
- Voltage-CollectorEmitterBreakdown(Max): 1200 V
- Current-Collector(Ic)(Max): 2735 A
- Power-Max: 11000 W
- Vce(on)(Max)@VgeIc: 2.1V @ 15V, 1800A
- Current-CollectorCutoff(Max): 5 mA
- InputCapacitance(Cies)@Vce: 110 nF @ 25 V
- Input: Standard
- NTCThermistor: No
- OperatingTemperature: -40°C ~ 150°C
- MountingType: Chassis Mount
- Package/Case: Module
- FZ1800R12HE4B9HOSA2 Infineon, IGBT MODULE 1200V 2735A, Discrete Semiconductor Products~Transistors - IGBTs - Modules
FZ1800R12HE4B9HOSA2, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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