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FS75R12W2T4B11BOMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules Package/Case: Module
- Description: IGBT MOD 1200V 107A 375W
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FS75R12W2T4B11BOMA1 Specifications:
- MfrPart.: FS75R12W2T4B11BOMA1
- Mfr: Infineon Technologies
- Description: IGBT MOD 1200V 107A 375W
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
- Package: Tray
- Series: -
- PartStatus: Active
- IGBTType: Trench Field Stop
- Configuration: Full Bridge
- Voltage-CollectorEmitterBreakdown(Max): 1200 V
- Current-Collector(Ic)(Max): 107 A
- Power-Max: 375 W
- Vce(on)(Max)@VgeIc: 2.15V @ 15V, 75A
- Current-CollectorCutoff(Max): 1 mA
- InputCapacitance(Cies)@Vce: 4.3 nF @ 25 V
- Input: Standard
- NTCThermistor: Yes
- OperatingTemperature: -40°C ~ 150°C
- MountingType: Chassis Mount
- Package/Case: Module
- FS75R12W2T4B11BOMA1 Infineon, IGBT MOD 1200V 107A 375W, Discrete Semiconductor Products~Transistors - IGBTs - Modules
FS75R12W2T4B11BOMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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