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FP50R07N2E4B11BOSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules Package/Case: Module
- Description: IGBT MODULE 650V 70A
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FP50R07N2E4B11BOSA1 Specifications:
- MfrPart.: FP50R07N2E4B11BOSA1
- Mfr: Infineon Technologies
- Description: IGBT MODULE 650V 70A
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
- Package: Bulk
- Series: -
- PartStatus: Active
- IGBTType: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage-CollectorEmitterBreakdown(Max): 650 V
- Current-Collector(Ic)(Max): 70 A
- Power-Max: -
- Vce(on)(Max)@VgeIc: 1.95V @ 15V, 50A
- Current-CollectorCutoff(Max): 1 mA
- InputCapacitance(Cies)@Vce: 3.1 nF @ 25 V
- Input: Standard
- NTCThermistor: Yes
- OperatingTemperature: -40°C ~ 150°C
- MountingType: Chassis Mount
- Package/Case: Module
- FP50R07N2E4B11BOSA1 Infineon, IGBT MODULE 650V 70A, Discrete Semiconductor Products~Transistors - IGBTs - Modules
FP50R07N2E4B11BOSA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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