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F475R07W2H3B51BOMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules Package/Case: Module
- Description: IGBT, 75A, 650V, N-CHANNEL
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F475R07W2H3B51BOMA1 Specifications:
- MfrPart.: F475R07W2H3B51BOMA1
- Mfr: Infineon Technologies
- Description: IGBT, 75A, 650V, N-CHANNEL
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
- Package: Tray
- Series: -
- PartStatus: Obsolete
- IGBTType: -
- Configuration: Full Bridge Inverter
- Voltage-CollectorEmitterBreakdown(Max): 650 V
- Current-Collector(Ic)(Max): 75 A
- Power-Max: 520 W
- Vce(on)(Max)@VgeIc: 1.55V @ 15V, 37.5A
- Current-CollectorCutoff(Max): 1 mA
- InputCapacitance(Cies)@Vce: 4.7 nF @ 25 V
- Input: Standard
- NTCThermistor: Yes
- OperatingTemperature: -40°C ~ 150°C (TJ)
- MountingType: Chassis Mount
- Package/Case: Module
- F475R07W2H3B51BOMA1 Infineon, IGBT, 75A, 650V, N-CHANNEL, Discrete Semiconductor Products~Transistors - IGBTs - Modules
F475R07W2H3B51BOMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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