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BYM300B170DN2HOSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules Package/Case: Module
- Description: IGBT MOD 650V 40A 20MW
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BYM300B170DN2HOSA1 Specifications:
- MfrPart.: BYM300B170DN2HOSA1
- Mfr: Infineon Technologies
- Description: IGBT MOD 650V 40A 20MW
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
- Package: Tray
- Series: -
- PartStatus: Last Time Buy
- IGBTType: Trench Field Stop
- Configuration: 2 Independent
- Voltage-CollectorEmitterBreakdown(Max): 650 V
- Current-Collector(Ic)(Max): 40 A
- Power-Max: 20 mW
- Vce(on)(Max)@VgeIc: 1.55V @ 15V, 25A
- Current-CollectorCutoff(Max): 40 µA
- InputCapacitance(Cies)@Vce: 2.8 nF @ 25 V
- Input: Standard
- NTCThermistor: Yes
- OperatingTemperature: -40°C ~ 150°C (TJ)
- MountingType: Chassis Mount
- Package/Case: Module
- BYM300B170DN2HOSA1 Infineon, IGBT MOD 650V 40A 20MW, Discrete Semiconductor Products~Transistors - IGBTs - Modules
BYM300B170DN2HOSA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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