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BUZ32H3045AATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO263-3-2
- Description: MOSFET N-CH 200V 9.5A TO263-3
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BUZ32H3045AATMA1 Specifications:
- MfrPart.: BUZ32H3045AATMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 200V 9.5A TO263-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: SIPMOS®
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 200 V
- Current-ContinuousDrain(Id)@25°C: 9.5A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 400mOhm @ 6A, 10V
- Vgs(th)(Max)@Id: 4V @ 1mA
- GateCharge(Qg)(Max)@Vgs: -
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 530 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 75W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TO263-3-2
- BUZ32H3045AATMA1 Infineon, MOSFET N-CH 200V 9.5A TO263-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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