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BSZ0910NDXTMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays Package/Case: 8-PowerVDFN
- Description: DIFFERENTIATED MOSFETS
- COMPETITIVE PRICE and DELIVERY TIME
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BSZ0910NDXTMA1 Specifications:
- MfrPart.: BSZ0910NDXTMA1
- Mfr: Infineon Technologies
- Description: DIFFERENTIATED MOSFETS
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™
- PartStatus: Not For New Designs
- FETType: 2 N-Channel (Dual)
- FETFeature: Logic Level Gate, 4.5V Drive
- DraintoSourceVoltage(Vdss): 30V
- Current-ContinuousDrain(Id)@25°C: 9.5A (Ta), 25A (Tc)
- RdsOn(Max)@IdVgs: 9.5mOhm @ 9A, 10V
- Vgs(th)(Max)@Id: 2V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 5.6nC @ 4.5V
- InputCapacitance(Ciss)(Max)@Vds: 800pF @ 15V
- Power-Max: 1.9W (Ta), 31W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: 8-PowerVDFN
- BSZ0910NDXTMA1 Infineon, DIFFERENTIATED MOSFETS, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
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