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BSP300H6327XUSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-SOT223-4
- Description: MOSFET N-CH 800V 190MA SOT223-4
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BSP300H6327XUSA1 Specifications:
- MfrPart.: BSP300H6327XUSA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 800V 190MA SOT223-4
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: SIPMOS®
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 800 V
- Current-ContinuousDrain(Id)@25°C: 190mA (Ta)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 20Ohm @ 190mA, 10V
- Vgs(th)(Max)@Id: 4V @ 1mA
- GateCharge(Qg)(Max)@Vgs: -
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 230 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 1.8W (Ta)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-SOT223-4
- BSP300H6327XUSA1 Infineon, MOSFET N-CH 800V 190MA SOT223-4, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSP300H6327XUSA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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