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BSP149 E6327 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-SOT223-4
- Description: MOSFET N-CH 200V 660MA SOT223-4
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BSP149 E6327 Specifications:
- MfrPart.: BSP149 E6327
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 200V 660MA SOT223-4
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR)
- Series: SIPMOS®
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 200 V
- Current-ContinuousDrain(Id)@25°C: 660mA (Ta)
- DriveVoltage(MaxRdsOnMinRdsOn): 0V, 10V
- RdsOn(Max)@IdVgs: 1.8Ohm @ 660mA, 10V
- Vgs(th)(Max)@Id: 1V @ 400µA
- GateCharge(Qg)(Max)@Vgs: 14 nC @ 5 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 430 pF @ 25 V
- FETFeature: Depletion Mode
- PowerDissipation(Max): 1.8W (Ta)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-SOT223-4
- BSP149 E6327 Infineon, MOSFET N-CH 200V 660MA SOT223-4, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSP149 E6327, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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