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BSM100GB120DN2HOSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules Package/Case: Module
- Description: IGBT MOD 1200V 150A 800W
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BSM100GB120DN2HOSA1 Specifications:
- MfrPart.: BSM100GB120DN2HOSA1
- Mfr: Infineon Technologies
- Description: IGBT MOD 1200V 150A 800W
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
- Package: Tray
- Series: -
- PartStatus: Not For New Designs
- IGBTType: -
- Configuration: Half Bridge
- Voltage-CollectorEmitterBreakdown(Max): 1200 V
- Current-Collector(Ic)(Max): 150 A
- Power-Max: 800 W
- Vce(on)(Max)@VgeIc: 3V @ 15V, 100A
- Current-CollectorCutoff(Max): 2 mA
- InputCapacitance(Cies)@Vce: 6.5 nF @ 25 V
- Input: Standard
- NTCThermistor: No
- OperatingTemperature: 150°C (TJ)
- MountingType: Chassis Mount
- Package/Case: Module
- BSM100GB120DN2HOSA1 Infineon, IGBT MOD 1200V 150A 800W, Discrete Semiconductor Products~Transistors - IGBTs - Modules
BSM100GB120DN2HOSA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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