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BSC900N20NS3GATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TDSON-8-5
- Description: MOSFET N-CH 200V 15.2A TDSON-8
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BSC900N20NS3GATMA1 Specifications:
- MfrPart.: BSC900N20NS3GATMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 200V 15.2A TDSON-8
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 200 V
- Current-ContinuousDrain(Id)@25°C: 15.2A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 90mOhm @ 7.6A, 10V
- Vgs(th)(Max)@Id: 4V @ 30µA
- GateCharge(Qg)(Max)@Vgs: 11.6 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 920 pF @ 100 V
- FETFeature: -
- PowerDissipation(Max): 62.5W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TDSON-8-5
- BSC900N20NS3GATMA1 Infineon, MOSFET N-CH 200V 15.2A TDSON-8, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSC900N20NS3GATMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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