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BSC196N10NSGATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TDSON-8-1
- Description: MOSFET N-CH 100V 8.5A/45A TDSON
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BSC196N10NSGATMA1 Specifications:
- MfrPart.: BSC196N10NSGATMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 100V 8.5A/45A TDSON
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 100 V
- Current-ContinuousDrain(Id)@25°C: 8.5A (Ta), 45A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 19.6mOhm @ 45A, 10V
- Vgs(th)(Max)@Id: 4V @ 42µA
- GateCharge(Qg)(Max)@Vgs: 34 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 2300 pF @ 50 V
- FETFeature: -
- PowerDissipation(Max): 78W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TDSON-8-1
- BSC196N10NSGATMA1 Infineon, MOSFET N-CH 100V 8.5A/45A TDSON, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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