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BSC112N06LDATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays Package/Case: 8-PowerVDFN
- Description: TRENCH 40<-<100V
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BSC112N06LDATMA1 Specifications:
- MfrPart.: BSC112N06LDATMA1
- Mfr: Infineon Technologies
- Description: TRENCH 40<-<100V
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™-T2
- PartStatus: Active
- FETType: 2 N-Channel (Dual)
- FETFeature: Logic Level Gate
- DraintoSourceVoltage(Vdss): 60V
- Current-ContinuousDrain(Id)@25°C: 20A (Tc)
- RdsOn(Max)@IdVgs: 11.2mOhm @ 17A, 10V
- Vgs(th)(Max)@Id: 2.2V @ 28µA
- GateCharge(Qg)(Max)@Vgs: 55nC @ 10V
- InputCapacitance(Ciss)(Max)@Vds: 4020pF @ 30V
- Power-Max: 65W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- Package/Case: 8-PowerVDFN
- BSC112N06LDATMA1 Infineon, TRENCH 40<-<100V, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
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