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BSC0910NDIATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays Package/Case: 8-PowerTDFN
- Description: MOSFET 2N-CH 25V 16A/31A TISON8
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BSC0910NDIATMA1 Specifications:
- MfrPart.: BSC0910NDIATMA1
- Mfr: Infineon Technologies
- Description: MOSFET 2N-CH 25V 16A/31A TISON8
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™
- PartStatus: Active
- FETType: 2 N-Channel (Dual) Asymmetrical
- FETFeature: Logic Level Gate, 4.5V Drive
- DraintoSourceVoltage(Vdss): 25V
- Current-ContinuousDrain(Id)@25°C: 11A, 31A
- RdsOn(Max)@IdVgs: 4.6mOhm @ 25A, 10V
- Vgs(th)(Max)@Id: 2V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 6.6nC @ 4.5V
- InputCapacitance(Ciss)(Max)@Vds: 4500pF @ 12V
- Power-Max: 1W
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: 8-PowerTDFN
- BSC0910NDIATMA1 Infineon, MOSFET 2N-CH 25V 16A/31A TISON8, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
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