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BSC060P03NS3EGATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TDSON-8-1
- Description: MOSFET P-CH 30V 17.7/100A 8TDSON
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BSC060P03NS3EGATMA1 Specifications:
- MfrPart.: BSC060P03NS3EGATMA1
- Mfr: Infineon Technologies
- Description: MOSFET P-CH 30V 17.7/100A 8TDSON
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 17.7A (Ta), 100A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10V
- RdsOn(Max)@IdVgs: 6mOhm @ 50A, 10V
- Vgs(th)(Max)@Id: 3.1V @ 150µA
- GateCharge(Qg)(Max)@Vgs: 81 nC @ 10 V
- Vgs(Max): ±25V
- InputCapacitance(Ciss)(Max)@Vds: 6020 pF @ 15 V
- FETFeature: -
- PowerDissipation(Max): 2.5W (Ta), 83W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TDSON-8-1
- BSC060P03NS3EGATMA1 Infineon, MOSFET P-CH 30V 17.7/100A 8TDSON, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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