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BSC021N08NS5ATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TSON-8-3
- Description: MOSFET TRENCH 80V TSON-8
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BSC021N08NS5ATMA1 Specifications:
- MfrPart.: BSC021N08NS5ATMA1
- Mfr: Infineon Technologies
- Description: MOSFET TRENCH 80V TSON-8
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™, StrongIRFET™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 80 V
- Current-ContinuousDrain(Id)@25°C: 100A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10V
- RdsOn(Max)@IdVgs: 2.1mOhm @ 50A, 10V
- Vgs(th)(Max)@Id: 3.8V @ 146µA
- GateCharge(Qg)(Max)@Vgs: 29 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 8600 pF @ 40 V
- FETFeature: Standard
- PowerDissipation(Max): 214W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TSON-8-3
- BSC021N08NS5ATMA1 Infineon, MOSFET TRENCH 80V TSON-8, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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