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BSB017N03LX3 G Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: MG-WDSON-2, CanPAK M™
- Description: MOSFET N-CH 30V 32A/147A 2WDSON
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BSB017N03LX3 G Specifications:
- MfrPart.: BSB017N03LX3 G
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 30V 32A/147A 2WDSON
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: OptiMOS™
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 32A (Ta), 147A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 1.7mOhm @ 30A, 10V
- Vgs(th)(Max)@Id: 2.2V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 102 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 7800 pF @ 15 V
- FETFeature: -
- PowerDissipation(Max): 2.8W (Ta), 57W (Tc)
- OperatingTemperature: -40°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: MG-WDSON-2, CanPAK M™
- BSB017N03LX3 G Infineon, MOSFET N-CH 30V 32A/147A 2WDSON, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSB017N03LX3 G, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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