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BFR949L3E6327 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF Package/Case: SC-101, SOT-883
- Description: RF BIPOLAR TRANSISTOR
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BFR949L3E6327 Specifications:
- MfrPart.: BFR949L3E6327
- Mfr: Infineon Technologies
- Description: RF BIPOLAR TRANSISTOR
- Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
- Package: Bulk
- Series: -
- PartStatus: Active
- TransistorType: NPN
- Voltage-CollectorEmitterBreakdown(Max): 10V
- Frequency-Transition: 9GHz
- NoiseFigure(dBTyp@f): 1dB ~ 2.5dB @ 1GHz
- Gain: 21.5dB
- Power-Max: 250mW
- DCCurrentGain(hFE)(Min)@IcVce: 100 @ 5mA, 6V
- Current-Collector(Ic)(Max): 50mA
- OperatingTemperature: 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: SC-101, SOT-883
- BFR949L3E6327 Infineon, RF BIPOLAR TRANSISTOR, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
BFR949L3E6327, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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