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BFR182E-6327 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF Package/Case: TO-236-3, SC-59, SOT-23-3
- Description: RF N-CHANNEL MOSFET
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BFR182E-6327 Specifications:
- MfrPart.: BFR182E-6327
- Mfr: Infineon Technologies
- Description: RF N-CHANNEL MOSFET
- Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
- Package: Bulk
- Series: Automotive, AEC-Q101, BFR182
- PartStatus: Active
- TransistorType: NPN
- Voltage-CollectorEmitterBreakdown(Max): 12V
- Frequency-Transition: 8GHz
- NoiseFigure(dBTyp@f): 1.3dB @ 1.8GHz
- Gain: 9.5dB
- Power-Max: 250mW
- DCCurrentGain(hFE)(Min)@IcVce: 70 @ 10mA, 8V
- Current-Collector(Ic)(Max): 35mA
- OperatingTemperature: 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: TO-236-3, SC-59, SOT-23-3
- BFR182E-6327 Infineon, RF N-CHANNEL MOSFET, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
BFR182E-6327, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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