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BCR553E6327HTSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased Package/Case: TO-236-3, SC-59, SOT-23-3
- Description: TRANS PREBIAS PNP 300MW SOT23-3
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BCR553E6327HTSA1 Specifications:
- MfrPart.: BCR553E6327HTSA1
- Mfr: Infineon Technologies
- Description: TRANS PREBIAS PNP 300MW SOT23-3
- Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
- Package: Tape & Reel (TR)
- Series: -
- PartStatus: Not For New Designs
- TransistorType: PNP - Pre-Biased
- Current-Collector(Ic)(Max): 500 mA
- Voltage-CollectorEmitterBreakdown(Max): 50 V
- Resistor-Base(R1): 2.2 kOhms
- Resistor-EmitterBase(R2): 2.2 kOhms
- DCCurrentGain(hFE)(Min)@IcVce: 40 @ 50mA, 5V
- VceSaturation(Max)@IbIc: 300mV @ 2.5mA, 50mA
- Current-CollectorCutoff(Max): 100nA (ICBO)
- Frequency-Transition: 150 MHz
- Power-Max: 330 mW
- MountingType: Surface Mount
- Package/Case: TO-236-3, SC-59, SOT-23-3
- BCR553E6327HTSA1 Infineon, TRANS PREBIAS PNP 300MW SOT23-3, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
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